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| FLL357ME L-Band Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=11.5dB (Typ.) High PAE: add=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL357ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Tc = 25C Condition Rating 15 -5 15 -65 to +175 175 Unit V V W C C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with gate resistance of 100. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB add Rth Channel to Case VDS = 10V IDS 0.6IDSS (Typ.), f = 2.3GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 800mA VDS = 5V, IDS = 60mA IGS = -60A Min. -1.0 -5 34.5 10.5 Limit Typ. Max. 1200 1800 600 -2.0 35.5 11.5 46 7.5 -3.5 10 Unit mA mS V V dBm dB % C/W Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: ME G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLL357ME L-Band Medium & High Power GaAs FET POWER DERATING CURVE 16 Total Power Dissipation (W) VGS =0V -0.5V 800 -1.0V 400 -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Drain Current (mA) 12 1200 8 4 Case Temperature (C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER VDS=10V IDS 0.6IDSS f = 2.3 GHz Output Power (dBm) 36 34 Pout 50 add (%) 40 30 add 32 30 28 26 16 18 20 22 24 26 20 10 Input Power (dBm) 2 FLL357ME L-Band Medium & High Power GaAs FET +j50 +j100 +j25 5 4.5 4 3.5 3 2.5 5 2 1.5 1 4 3 21 25 0.5 GHz 50 100 250 S11 S22 +90 S21 S12 0.5 GHz 5 GHz +j250 +j10 4 1 1.5 3 2 3 1 45 0.5 0 180 8 6 4 2 0 .02 .04 .06 .08 SCALE FOR |S21| SCALE FOR |S12| -j10 0.5 GHz -j250 -j25 -j50 -j100 -90 FREQUENCY (MHZ) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 S11 MAG .890 .881 .883 .883 .882 .879 .872 .858 .826 .768 ANG -149.0 -169.3 -179.0 173.9 168.1 162.5 156.7 149.8 140.4 126.9 S-PARAMETERS VDS = 10V, IDS = 720mA S21 S12 MAG ANG MAG ANG 7.584 3.963 2.747 2.099 1.708 1.515 1.304 1.366 1.223 1.303 103.7 94.3 90.3 87.5 87.1 86.2 86.6 84.3 81.5 76.6 .019 .020 .022 .023 .027 .028 .039 .044 .052 .074 30.4 36.9 50.9 64.9 81.5 94.6 103.3 111.8 111.2 120.7 S22 MAG .427 .461 .491 .529 .560 .592 .613 .624 .639 .639 ANG -167.0 -167.5 -168.0 -168.1 -168.9 -170.5 -172.9 -175.1 -179.1 175.1 Download S-Parameters, click here 3 FLL357ME L-Band Medium & High Power GaAs FET Case Style "ME" Metal-Ceramic Hermetic Package 5.0 (0.197) 2-O2.20.15 (0.098) 2.0 Min. (0.079) 2 2.0 Min. (0.079) 5.0 -0.15 (0.197) +0.1 1 4 3 1.00.15 (0.039) 16.00.15 (0.630) 0.10.05 (0.004) 1.650.2 (0.065) 12.00.15 (0.472) 9.0 (0.354) 4.0 Max. (0.157) 1. 2. 3. 4. Gate Source (Flange) Drain Source (Flange) 1.2 (0.048) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put these products into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 |
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